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    • 专利摘要:
    The invention relates to an image sensor disposed in and on a semiconductor substrate (201) having a front face and a rear face, said sensor comprising a plurality of pixels (300) each comprising: a photosensitive area (105), an area reading frame (111), and a storage area (107) extending between the photosensitive area (105) and the reading area (111); an insulated vertical electrode (103) having a transfer aperture between the photosensitive area (105) and the storage area (107); and at least one of the following isolation elements: a) a layer (201c) of an insulating material extending under the surface of the photosensitive area (105) and the storage area (107) and having its face before contacting the rear face of the electrode (103); and b) an insulation wall (330) extending vertically in the opening, or under the opening.
    公开号:FR3027732A1
    申请号:FR1460301
    申请日:2014-10-27
    公开日:2016-04-29
    发明作者:Yvon Cazaux；Francois Roy；Marie Guillon；Arnaud Laflaquiere
    申请人:Commissariat a lEnergie Atomique CEA；STMicroelectronics Crolles 2 SAS；STMicroelectronics Grenoble 2 SAS；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD This invention relates to an image sensor having a plurality of pixels formed in and on a semiconductor substrate. Of particular interest here is a sensor adapted to a so-called "global shutter" mode of control, that is to say in which all the pixels of the sensor are exposed simultaneously. More particularly, we are interested here in a sensor with vertical control electrodes.
    [0002] DISCUSSION OF THE PRIOR ART Vertical electrode pixel structures, compatible with a global blanking control, have already been proposed by the applicants, in particular in patent applications US2014183685 and EP2752878. However, there is a need for improvement of structures of this type, in particular to reduce their sensitivity to certain sources of parasitic noise. SUMMARY Thus, an embodiment provides an image sensor 20 disposed in and on a semiconductor substrate having a front face and a back face, said sensor comprising a plurality of pixels each comprising: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; a first insulated vertical electrode extending from the front face of the substrate between the photosensitive zone and the storage zone, comprising at least one aperture extending from the front face of the substrate and defining a charge transfer zone between the photosensitive zone and the storage area; and at least one of the following isolation elements: a) a layer of insulating material extending at least under the entire surface of the photosensitive area and under the entire surface of the storage area and having its front face in contact with the back side of said electrode; and b) an insulation wall extending vertically in or opposite a bottom portion of said opening, or under said opening, such that the depth of the charge transfer zone is less than the depth of said electrode . According to one embodiment, each pixel comprises at least the isolation element a).
    [0003] According to one embodiment, the substrate is an SOI type substrate comprising a semiconductor support coated with an insulating layer coated with a semiconductor layer, and in which, in each pixel, the isolation element a) is the layer isolating the substrate.
    [0004] According to one embodiment, in each pixel, the photosensitive zone, the storage zone, the reading zone, and the first semiconductor According to least one electrode element are arranged in the layer of the substrate. an embodiment, each pixel comprises at isolation b). one embodiment, in each pixel, the vertical isolation wall comprises a doped region of the same conductivity type as the substrate and having a doping level greater than that of the substrate, located in a lower part of the opening formed in the first electrode.
    [0005] According to one embodiment, in each pixel the opening formed in the first electrode extends to a depth less than the total depth of the first electrode, and the isolation wall is constituted by the portion of the first electrode located under said opening. According to one embodiment, in each pixel, the isolation wall is constituted by a vertical insulating trench extending from the rear face of the substrate, facing a lower portion of the opening formed in the first electrode. According to one embodiment, in each pixel: the photosensitive zone comprises a first well of conductivity type opposite to that of the substrate, and the storage zone comprises a second well of conductivity type opposite to that of the substrate and of depth greater than that of the first box; the first electrode extends to a depth greater than or equal to that of the second box; and the vertical isolation wall extends between the rear face plane of the first electrode, and a plane located under the rear face plane of the first box. According to one embodiment, each pixel comprises the isolation element a) and the isolation element b). According to one embodiment, each pixel further comprises a second insulated vertical electrode extending from the front face of the substrate between the storage zone and the reading zone, comprising at least one opening extending from the front face of the substrate. and defining a charge transfer zone between the storage area and the read area. According to one embodiment, in each pixel, the photosensitive area is partially delimited by at least a third isolated vertical electrode extending from the front face of the substrate. According to one embodiment, in each pixel, the reading zone is coupled to a reading circuit of the pixel.
    [0006] B13722 - DD15786 - 14-GR4-0604 4 Brief description of the drawings These features and their advantages, as well as others, will be set forth in detail in the following non-limiting description of particular embodiments in connection with the figures. attached, among which: FIGS. 1A-1G are sectional and top views schematically showing the structure of an example of a pixel of an image sensor; Fig. 2 is a sectional view schematically showing the structure of an example of a pixel of an image sensor according to a first embodiment; Figures aA and 3B are sectional views schematically showing the structure of an example of a pixel of an image sensor according to a second embodiment; Figure 4 is a sectional view schematically showing an alternative embodiment of the pixel of Figures aA and 3B; Figure 5 is a sectional view schematically showing another alternative embodiment of the pixel of Figures aA and 3B; and Figure 6 is a sectional view schematically showing another alternative embodiment of the pixel of Figures aA and 3B. DETAILED DESCRIPTION For the sake of clarity, the same elements have been designated with the same references in the various figures and, moreover, as is customary in the representation of the integrated circuits, the various figures are not drawn to scale. On the other hand, in the present application, unless otherwise indicated, the terms "approximately", "substantially", "about", "of the order of", etc., mean "to within 20%", and directional references such as "Upper", "Lower", "Overlying", "Above", "Lateral", "Horizontal", "Vertical", etc., apply to devices B13722 - DD15786 - 14-GR4-0604 oriented in the manner illustrated in the corresponding sectional views, it being understood that, in practice, these devices may be oriented differently. FIGS. 1A-1G schematically represent an example of a pixel 100 of an image sensor made in and on a semiconductor substrate 101, for example of silicon. FIG. 1A represents the pixel 100 in plan view, and FIGS. 1B to 1G are side sectional views respectively along the B-B, C-C, D-D, E-E, F-F and G-G planes of FIG. In practice, an image sensor may comprise a plurality of identical pixels 100 arranged in and on the same semiconductor substrate, for example along lines and columns. Pixel 100 includes a photosensitive area, an intermediate charge storage area or memory area, and a read area. The storage area extends between the photosensitive area and the read area, i.e. it has a common edge with the photosensitive area, and another edge common with the read area. The pixel 100 further comprises a device for transferring charges from the photosensitive area to the storage area, and from the storage area to the read area, the read area being connected to a read circuit of the pixel. In this example, the substrate 101 comprises a heavily doped P-type (P +) silicon carrier 101a, and a P-type (P-) lightly doped layer 101b, for example an epitaxial layer, coating the upper surface of the support 101a. . The photosensitive zone of the pixel 100 comprises a N type doped box 105 of doping level Ni formed in an upper part of the layer 101b. The pixel storage area comprises, juxtaposed with the box 105, a N-type doped casing 107 of doping level N2, formed in an upper part of the layer 101b. In this example, the boxes 105 and 107 have substantially the same depth. The described embodiments are however not limited to this particular case. Boxes 105 and 107 are, for example, approximately parallelepipedic with a common side. The dimensions and doping levels of the wells 105 and 107 are preferably chosen so that the photosensitive zone and the pixel storage zone have substantially equal charge storage capacities. In this example, the box 105 has, seen from above, a surface greater than that of the box 107, and its doping level (Ni) is lower than that (N2) of the box 107, so that the photosensitive area and the area pixel storage have substantially equal charge storage capabilities. A thin heavily doped P-type layer (P +) may be formed on the surface of the wells 105 and 107. The reading zone of the pixel 100 comprises, juxtaposed with the well 107, on the side of the well 107 opposite the well 105 in this example. a strongly doped region 111 of type N (N +). The region 111 is more heavily doped than the boxes 105 and 107, and extends in an upper portion of the layer 101a, to a depth less than that of the box 107. By way of non-limiting example, the layer 101b may have a thickness of between 1 and 30 pin, the boxes 105 and 107 may each have a thickness of between 1 and 10 pin, and preferably between 2 and 4 pin, the reading region 111 may have a thickness between 0.1 and 0.5 pin, and the doping levels may range from 1014 to 1016 atoms / cm3 for layer 101b, from 1018 to 1020 atoms / cm3 for support 101a, from 1016 to 1 * 1018 atoms / cm3 for the wells 105 and 107, and between 1 * 1019 and 1 * 1022 atoms / cm3 for the region 111. An isolated vertical electrode or grid 103 extends from the upper face or the front face of the substrate, between the boxes 105 and 107, at their common side. The electrode 103 extends to a depth at least equal to that of the deepest caissons 105 and 107. The electrode 103 isolates the caisson 105 from the caisson 107, except for a charge transfer zone 104, defined by an opening formed in the electrode 103 and connecting the casing 105 to the casing 107. In the example shown, the electrode 103 extends to a depth slightly greater than that of the electrodes 103. caissons 105 and 107, and has, seen from above, the shape of a U defining the essential of three sides of the box 107, the horizontal bar of the U being located opposite the side common to the boxes 105 and 107. The opening defining the transfer zone 104 is located in the region of the electrode 103 situated between the caissons 105 and 107 (corresponding to the horizontal bar of the U when viewed from above), and has the shape of a vertical band extending over the entire height of the electrode 103. Another electrode or vertical grid iso 109 extends from the front face of the substrate, between the box 107 and the reading region 111, at their common side. The electrode 109 extends over a substantially identical depth to that of the electrode 103. The electrode 109 isolates the well 107 from the region 111, except for a charge transfer zone 106, defined by an opening formed in the electrode 109 and connecting the casing 107 to the region 111. In the example shown, the electrode 109 has the shape of a vertical pan delimiting the essential side of the box 107 juxtaposed to the region 111 (ie that is, the side of the box 107 opposite the transfer zone 104), extending to a depth slightly greater than that of the box 107, and comprises a vertical strip-shaped opening, which extends over its entire height and delimits the transfer zone 106. In the example shown, another isolated vertical electrode or grid 102 extends from the front face of the substrate, laterally delimiting the essential of the three sides of the box 105 not delimited by the electrode 103. The electrode 102 has For example, to form the electrodes 102, 103 and 109, trenches extending vertically in the substrate from its front face can be formed around the boxes 105 and 107, for example. in a pattern corresponding to the desired shape of the electrodes. The side walls and bottom of the trenches may be coated with an insulating material, for example silicon oxide, and then the trenches may be filled with a conductive material. By way of example, the trench-filling conducting material is highly doped polycrystalline silicon, for example having a doping level of between 1x1018 and 1x102 ° atoms / cm3, or a metal, for example copper or tungsten. By way of non-limiting example, the trenches may have a depth of between 1 and 10 μm, and preferably between 2 and 5 μm, and a width between 0.1 and 0.5 μm. It should be noted that the shapes, seen from above, of the electrodes 102, 103 and 109, illustrated in FIG. 1A, are only indicative and may differ in order to improve the charge transfer. The shape of the electrode 102 may in particular vary if the detection zone is a pinned photodiode (in English "pinned photo-diode") or controlled by the capabilities MOS (Metal Oxide Semiconductor) defined by isolated conducting trenches. The upper faces or front faces of the electrodes 102, 103 and 109 and of the region 111 are connected by metallizations (not shown), respectively to a node Vp for applying a polarization signal, to nodes TG1 and TG2. application of charge transfer control signals, and an SN node connected to or coupled to a voltage reading circuit. In the example shown, the reading circuit (FIG. LA) comprises a transistor 114 connecting the node SN to a high power supply rail VDD of the sensor, a transistor 115 mounted on a follower source whose gate is connected to the node SN and whose drain is connected to the VDD rail, and a transistor 117 connecting the source of the transistor 115 to a read line 119 of a matrix array comprising the pixel 100. The gate of the transistor 114 is connected to an application node RST of a reset control signal of the region 111, and the gate of the transistor 117 is connected to an RS node for application of a pixel select signal 100. In FIG. in this example, the transistors 114, 115 and 117 are formed in a P-type (PW) doped box 120 laterally delimited by an isolation region 121. In this example, the isolation region 121 comprises an isolated-wall trench filled with a conductive material surrounding the ca isson 120, this trench may be formed at the same time as the vertical electrodes 102, 103 and 109. The isolation region 121 may however be replaced by any other device known peripheral insulation of a box comprising transistors, for example an STI type trench or junction insulation. An example of a mode of use or control of pixel 100 will now be described.
    [0007] In the charge accumulation or integration phase, the signals Vp and TG1 are set at a reference potential. By way of example, this potential may be that of the mass, or be negative with respect to the mass, for example of the order of -1 V. Such a polarization of the electrodes 102 and 103 causes an accumulation of holes along vertical trench walls delimiting the photosensitive zone. Holes also accumulate in the transfer zone 104, blocking the electron exchanges between the boxes 105 and 107. The substrate 101 is also polarized at a reference potential, for example that of the mass, it forms a potential well in the photosensitive zone, which, in the absence of illumination, depends on the doping levels and polarization potentials of the electrodes and the substrate. The doping levels and the polarization potentials are preferably chosen so that, in the absence of illumination and after reinitialization, the box 105 of the photosensitive zone is completely depleted (majority carrier void, ie say electrons in this example). When the pixel is illuminated, electron / hole pairs are photogenerated in the light-sensitive area, and the photogenerated electrons are collected by the box 105. In the transfer phase of the photogenerated charges accumulated in the area photosensitive to the intermediate storage area, the Vp signal remains unchanged, that is to say that the electrode 102 remains polarized at the same reference potential as during the accumulation phase. This same reference potential is also applied to the signal TG2, which causes the accumulation of holes in the transfer zone 106, blocking the electron exchanges between the well 107 and the region 111. The signal TG1 is set to a value greater than the maximum potential of the potential well formed in the photosensitive zone during integration, for example at a value between 2 and 3 V. This causes the transfer of the photogenerated electrons contained in the box 105 to the box 107, via the zone After the transfer, the signal TG1 is again set to the same low value as the signals Vp and TG2, so as to create, in the storage area, a potential well adapted to maintain the electrons transferred. confined in the casing 107, waiting for a subsequent transfer to the reading zone 111. At this stage, the photosensitive zone is empty of any photogenerated charge, that is to say in a state of charge. t reset, and a new integration phase can begin.
    [0008] In the transfer phase of the charges contained in the storage area to the reading zone 111, the signals Vp and TG1 are maintained at the same low value reference potential as during the integration phase. The signal TG2 is set at a value greater than the maximum potential of the potential well formed in the storage area during the intermediate storage phase, for example at a value between 2 and 3 V. This causes the transfer of the photogenerated electrons contained in the box 107 to the region 111, via the transfer zone 106. Once the transfer is made, the signal TG2 is again set to the same low value as the signals Vp and TG1, B13722 - DD15786 - 14 - GR4-0604 11 so as to block the electron exchanges between the box 107 and the region 111. At this stage, the storage area is empty of any photogenerated charge, that is to say in a reset state. The doping levels and the polarization potentials are preferably chosen so that, in the reset state, the chamber 107 of the storage zone is completely depleted (majority carriers void, ie electrons in this example). As has been detailed in the above-mentioned US2014183685 and EP2752878 patent applications, the structures of the type described in relation to FIGS. 1A to 1G are particularly well suited to an overall closure control mode, in particular because of the presence, in each pixel, a storage area or memory point, which allows to store in a relatively immune manner to the noise photogenerated charges accumulated in the photodiode during integration, waiting to read these charges via the reading zone and the reading circuit. For example, during an integration period common to all the pixels of the sensor, photogenerated charges are accumulated in the photosensitive areas of the pixels of the sensor. At the end of the integration, a transfer phase is implemented simultaneously in all the pixels of the sensor, in which, in each pixel, the photogenerated charges accumulated in the photosensitive zone are transferred into the storage area. After the transfer phase, a complete image is stored in the different storage areas of the sensor. The stored image can then be read, line by line, via the read zone and the read circuit, during the next integration period of the sensor. Although this has not been shown in FIGS. 1A to 1G, the pixel 100 also comprises an opaque screen, for example a metal screen, situated on the side of its upper face or front face, masking the entire surface of the storage area. of the pixel. By way of example, the opaque screen masks the entire surface of the pixel except for its photosensitive zone. Such a screen makes it possible in particular to prevent charges being photogenerated and accumulated in the storage area during the period of storage of an illumination level by the storage area, which would alter the stored information. In practice, however, it is found that the known structures of pixels with vertical electrodes do not make it possible to completely overcome a noise related to an accumulation of parasitic charges in the storage area, especially during the period of storage of a signal by the storage area. This is particularly problematic in the case of a global shutter control of the type described above. Indeed, in this case, the duration of storage of the signal by the storage area may be particularly long for certain pixels of the sensor (typically of the same order of magnitude as the integration period for the last pixels in the reading order pixels of the sensor). In addition, the storage time of the signal by the storage area is not the same for all the pixels of the sensor. The diffusion of parasitic charges to the storage area can thus cause particularly troublesome artifacts in the final image. It would be desirable to have a vertical electrode pixel structure compatible with a global closed control, in which the intermediate storage area of the pixel is better isolated from spurious scattering than in known structures. The inventors have notably identified that a source of parasitic charges in structures of the type described in relation to FIGS. 1A-1G comes from light rays of high wavelength, which are capable of being absorbed to a depth greater than that of the electrode 103 of the pixel, for example in the silicon support 101a. The photogenerated charges at a depth greater than that of the electrode 103 can be recombined in the support 101a, or collected by the box 105 of the photosensitive zone.
    [0009] However, the inventors have found that part of these charges diffuse laterally under the electrode 103, and is collected by the box 107 of the storage area, thus altering the stored information. in the storage area.
    [0010] Figure 2 schematically shows the structure of an example of a pixel 200 of an image sensor according to a first embodiment. The pixel 200 comprises elements that are in common with the pixel 100 of the figures LA to 1G. These elements will not be described again. In the following, only the differences between the pixels 100 and 200 will be detailed. Figure 2 is a sectional view of the pixel 200 according to a sectional plane identical to that of Figure 1F. According to one aspect of the embodiment of Figure 2, the pixel 200 comprises an insulating layer extending horizontally under the entire surface of the photosensitive zone and the pixel storage area, for example under the entire surface of the pixel, the upper face or front face of this layer being in contact with the lower face or rear face of the charge transfer control electrode 103 between the photosensitive zone and the storage area of the pixel. The pixel 200 of FIG. 2 is formed in and on a semiconductor-on-insulator (SOI) substrate 201. In this example, the substrate 201 comprises a P-type (P +) heavily doped silicon support 201a, for example identical or similar to the support 101a of the pixel 100 of the figures LA to 1G, a lightly doped P-type layer 201b (P-1). ), for example identical or similar to the layer 101b of the pixel 100 of Figures LA to 1G, and an insulating layer 201c, for example silicon oxide, disposed between the support 201a and the layer 201b. The pixel 200 comprises, formed in and on the layer 201b, substantially the same elements as the elements of the pixel 100 formed in and on the layer 101b of the pixel 100. The upper face or front face of the insulating layer 201c is in contact with the lower or rear face of the insulated vertical electrode 103 separating the casing 105 from the casing 107. In other words, the insulated electrode 103 extends vertically over the whole of the casing 107. thickness of the layer 201b. In the example shown, the insulated electrodes 102 and 109 and the isolation region 121 have the same depth as the electrode 103, and therefore have their lower faces or rear faces in contact with the front face of the insulating layer 201c. The boxes 105 and 107 may extend over the entire thickness of the layer 201b, or to a thickness less than that of the layer 201b as shown in FIG. 2.
    [0011] An advantage of the pixel 200 of FIG. 2 with respect to the pixel 100 of FIGS. 1A-1G is that it prevents photogenerated charges at a depth greater than that of the electrode 103 from being collected by the box 107 of the zone of FIG. storage. Indeed, when a high wavelength ray reaches the photosensitive zone of the pixel 200, the corresponding photons can pass through the well 105 and then the insulating layer 201c, and be absorbed in the silicon support 201a, causing the generation of pairs electron-hole. However, the corresponding photogenerated electrons can not pass through the dielectric layer 201c. They can not be collected either by the box 105 of the photosensitive zone, or by the box 107 of the storage area, and eventually recombine with holes of the support 201a. The figures m. and 3B schematically represent the structure of an example of a pixel 300 of an image sensor according to a second embodiment. The pixel 300 comprises elements that are in common with the pixel 200 of FIG. 2. These elements will not be described again. In the following, only the differences between the pixels 200 and 300 will be detailed. The figures m. and 3B are sectional views of the pixel 300 in sectional planes identical to those of FIGS. 1F and 1E, respectively. The pixel 300 of the figures m. and 3B differs from the pixel 200 in FIG. 2 in that, in the pixel 300, the well 105 of the photosensitive zone has a much smaller depth than in the pixel 200, for example a depth of between 0.3 and 0.8 pin. In particular, in the pixel 300, the depth of the box 105 is, for example, less than that of the box 107 of the storage area, and less than that of the transfer electrode 103. In the pixel 300, the thickness of the box 105 and the doping levels of the box 105, the layer 113 and the layer 201b, are chosen so that the regions 105 and 201b form a pinch diode, or diode completely depleted, that is to say to say that, after reinitialization, in the absence of polarization of the electrodes 102 and 103 and the substrate, and in the absence of illumination, the box 105 is completely empty of majority carriers. Under these conditions, a potential well is formed in the photosensitive zone, which depends solely on the doping levels chosen. The operation of pixel 300 may be the same as or similar to that described with reference to FIGS. 1A-1G. In such a structure, the depth of the potential well formed at the photosensitive zone during the integration may be greater than the depth of the well 105, but remains well below the depth of the electrode 103. Thus, when photons are absorbed at the level of the photosensitive zone to an intermediate depth between the lower face of the box 105 and the lower face of the electrode 103, the resulting photogenerated charges are likely to diffuse towards the storage area, via the lower part of the opening formed in the electrode 103 (which is not blocking because the lower part of the layer 201b is not depleted). These charges can then be collected by the box 107 of the storage area, thus altering the information stored by the storage area. To remedy this problem, according to one aspect of the embodiment of FIGS. AA and 3B, the pixel 300 comprises an isolating wall 330 extending vertically in or opposite to one another. a lower part of the opening formed in the electrode 103 and defining the load transfer zone 104, or below this opening, so that the depth of the charge transfer zone 104 is less than the depth of the electrode 103. Preferably, the underside or rear face of the isolation wall 330 is situated at a depth identical to or greater than that of the lower face of the electrode 103, and the upper face or front face of the isolation wall 330 is located at a depth greater than that of the lower face or rear face of the box 105. In the example shown, the isolation wall 330 extends vertically in a lower part of the opening formed in the electrode 103 and delimita both the transfer zone 104, so as to isolate the photosensitive area of the storage area at the bottom of this opening. In the example of FIGS. AA and 3B, the isolating wall 330 is constituted by a highly doped P-type region, for example with a doping level of between 1017 and 1019 atoms / cm3. The doping of the region 330 is for example carried out by deep implantation from the front face of the substrate, for example before the formation of the caissons 105 and 107 and of the layer 113. When photons are absorbed at the level of the photosensitive zone at a distance of depth greater than the maximum depth of the potential well of the photosensitive area, and less than the depth of the electrode 103, the isolation wall 330 prevents the corresponding photogenerated charges can reach the storage area. These charges are then recombined in the layer 201b or the wall 330, or collected by the accumulation region of the photosensitive zone. As shown in FIGS. AA and 3B, the embodiment described with reference to FIGS. AA and 3B, namely the provision of a vertical limiting wall B13722 - DD15786 - 14-GR4-0604 17 charge transfer zone 104 at a depth less than that of the electrode 103, can be combined with the embodiment of FIG. 2, namely the provision of an insulating layer in contact with the lower face of the electrode 103 below the surface of the pixel. This has the advantage of considerably limiting the risks of parasitic charge collection by the storage area during the storage period of a signal level by the storage area, regardless of the wavelengths of illumination. of the sensor.
    [0012] However, the embodiment of FIGS. 3A and 3B (vertical isolation wall) can also be used independently of the embodiment of FIG. 2 (insulating layer below the surface of the pixel). In particular, in pixel 300 of FIGS. AA and 3B, if the range of pixel illumination wavelengths does not include wavelengths that can be absorbed to a depth greater than that of the electrode. 103, the insulating layer 201c can be omitted. Figure 4 schematically shows an alternative embodiment of the pixel 300 of Figures 3A and 3B. Figure 4 is a sectional view of the pixel 300 according to a sectional plane identical to that of Figure 3A. Only the differences between the pixel 300 of FIG. 4 and the pixel 300 of FIGS. 3A and 3B will be detailed below. The pixel 300 of FIG. 4 differs from the pixel 300 of FIGS. 3A and 3B essentially in the manner of making its vertical isolation wall 330. In this example, before the formation of the N-type wells 105 and 107, a box 401 P type, doping level greater than that of the layer 201b, 30 is formed in the layer 201b from the front face of the substrate, this box extending, seen from above over the entire surface of the storage area and the charge transfer zone 104, and interrupting at the level of the photosensitive zone of the pixel. The doping level of the well 401 is for example between B13722 - DD15786 - 14-GR4-0604 18 1 * 1016 and 1 * 1019 atoms / cm3. The depth of the caisson 401 is preferably greater than the depth of the caisson 107. After the formation of the caisson 401, the caissons 105 and 107 of the N type are formed. In a top view (not shown), the boxes 105 and 107 have an adjacent edge located inside the box 401. More particularly, in the example shown, the part of the box 401 located under the box 105 (in the box). vertical aperture formed in the electrode 103) forms the vertical isolation wall 330 for preventing side scattering of parasitic charges from the photosensitive area to the storage area through the opening formed in 103. In the example shown, the box 401 has a depth greater than that of the box 107 of the storage area, which has the additional advantage of blocking the diffusion of parasitic charges to the storage area by the underside of the storage area. Alternatively, the well 401 may have the same depth as the well 107. Figure 5 schematically shows another alternative embodiment of the pixel 300 of Figures aA and 3B. Figure 5 is a sectional view of the pixel 300 according to a sectional plane identical to that of Figure 3B. Only the differences between the pixel 300 of Figure 5 and the pixel 300 of Figures aA and 3B will be detailed below. The pixel 300 of FIG. 5 differs from the pixel 300 of FIGS. AA and 3B essentially by the nature of its vertical isolation wall 330. In the example of FIG. 5, the aperture formed in the insulated vertical electrode 103 defining the charge transfer region 104 of the pixel at a depth less than the depth of the electrode 103. Thus, the vertical isolating wall 330 is constituted by the insulated electrode portion 103 located under the opening formed in the electrode 103, i.e., under the charge transfer region 104.
    [0013] For producing an electrode 103 having a vertical opening extending to a depth less than the total depth of the electrode, it is possible to form trenches in a pattern having, seen from above , substantially the same shape as previously described, but using an etching process adapted to make trenches whose lower part is wider than the upper part, or flared trenches, sometimes called trenches in the form of bottle. The spacing between the electrode portions 103 at the upper surface of the substrate is chosen so that the trenches meet at a determined depth h, less than the maximum depth of the electrode 103, and preferably greater than the depth of the box 105. The distance h corresponds to the height of the charge transfer zone. The side walls and bottom of the trenches can then be coated with an insulating material, and then the trenches can be filled with a conductive material. Figure 6 schematically shows another alternative embodiment of the pixel 300 of Figures aA and 3B. Figure 6 is a sectional view of the pixel 300 according to a sectional plane identical to that of Figure aA. Only the differences between the pixel 300 of Figure 6 and the pixel 300 of Figures aA and 3B will be detailed below. The pixel 300 of FIG. 6 differs from the pixel 300 of the preceding examples in that it is intended to be illuminated by its rear face, whereas the examples of FIGS. AA and 3B, 4 and 5 were aimed at pixels with illumination by the face. before. The pixel 300 of FIG. 6 also differs from the pixel 300 of FIGS. AA and 3B by the nature of its vertical isolation wall 330. The embodiment of the pixel 300 of FIG. 6 comprises substantially the same steps as the production of the pixel 300 Figures aA-3B, except for the isolation wall formation step 330, and further comprises, after the formation of the various front-side pixel elements of the substrate B13722 - DD15786 - 14-GR4-0604 20 (in particular the electrodes 102, 103 and 109, the boxes 105, 107 and 120, the regions 111 and 121, and the layer 113), a step of thinning the substrate 201 by its rear face. In the example shown, during thinning, only the layer 201b of the substrate 201 is retained, that is to say that the thinning is stopped after the removal of the support 201a and the insulating layer 201c. A protective coating may be disposed on the back side of the pixel after thinning. Alternatively, the layer 201c may be retained in whole or in part to protect the back side of the pixel. Prior to thinning, a support handle (not shown) may be contiguous to the sensor on the side of its front face. As a variant, the pixel 300 of FIG. 6 may be made from a semiconductor substrate of the type described in relation to FIGS. 1A to 1G, having no intermediate insulating layer. In the example of FIG. 6, the wall 330 is constituted by an insulating vertical trench formed after the thinning step, starting from the rear face of the substrate, in or opposite a lower part of the opening. vertically formed in the electrode 103 and defining the charge transfer zone 104. The isolated trench forming the wall 330 preferably stops at a lower level than the lower face of the box 105. In the example shown, the insulating trench forming the wall 330 is located facing the lower part of the opening formed in the electrode 103, that is to say shifted laterally relative to the electrode 103. This simplifies the realization of this trench, by reducing the alignment constraints with respect to the electrode 103. However, to obtain a significant effect of isolation of the storage area, the lateral distance between the trench forming the wall 330 and the electrode 103 will be chosen relatively low preference, for example between 50 and 400 rua. In the example shown, the trench forming the wall 330 is located on the photosensitive zone side. Alternatively, the trench forming the wall 330 is located side storage area. In the example shown, the trench forming the wall 330 is of the same type as the insulated vertical electrodes of the sensor, that is to say that the walls of the trench are coated with an insulating layer, the core of the trench being filled with a conductive material. Alternatively, the trench may be fully filled with an insulating material, for example silicon oxide.
    [0014] Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art. In particular, the embodiments described can be adapted to other vertical electrode pixel structures comprising a photosensitive zone and a storage zone, as those described above. For example, those skilled in the art will be able to adapt the described embodiments to a pixel structure further comprising an anti-glare device attached to the photosensitive zone, making it possible to prevent, in the event of saturation of the photosensitive zone during a period of time. integration period, a surplus of photogenerated charges is poured into the intermediate storage area, causing pollution of the acquired image during the previous integration period. More particularly, the embodiments described can be adapted to a pixel structure of the type described in relation to FIGS. 4 and 5 of the aforementioned US2014183685 and EP2752878 patent applications. In addition, the described embodiments may be adapted to pixel structures in which all conductivity types are inverted with respect to the above-mentioned examples. In addition, the described embodiments are not limited to the exemplary read circuit shown in Fig. 1A. Those skilled in the art will obtain the desired operation using other known reading circuits.
    权利要求:
    Claims (13)
    [0001]
    REVENDICATIONS1. An image sensor disposed in and on a semiconductor substrate (201) having a front face and a rear face, said sensor comprising a plurality of pixels (200 300) each comprising: a photosensitive area (105), a read area (111) ), and a storage area (107) extending between the photosensitive area (105) and the read area (111); a first insulated vertical electrode (103) extending from the front face of the substrate between the photosensitive area (105) and the storage area (107), including at least one opening extending from the front face of the substrate and defining a charge transfer area (104) between the photosensitive area (105) and the storage area (107); and at least one of the following isolation elements: a) a layer (201c) of insulating material extending at least under the entire surface of the photosensitive area (105) and under the entire area of the storage area ( 107) and having its front face in contact with the rear face of said electrode (103); and b) an insulation wall (330) extending vertically in or opposite a bottom portion of said opening, or under said opening, such that the depth of the charge transfer zone (104) is less than at the depth of said electrode (103).
    [0002]
    The sensor of claim 1, wherein each pixel (200; 300) comprises at least isolation element a).
    [0003]
    The sensor according to claim 2, wherein the substrate (201) is an SOI-type substrate comprising a semiconductor medium (201a) coated with an insulating layer (201c) coated with a semiconductor layer (201b), and wherein in each pixel (200; 300), the isolation element a) is the insulating layer (201c) of the substrate.B13722 - DD15786 - 14-GR4-0604 24
    [0004]
    The sensor of claim 3, wherein in each pixel (200; 300) the photosensitive area (105), the storage area (107), the read area (111), and the first electrode (103). are disposed in the semiconductor layer (201b) of the substrate.
    [0005]
    The sensor of any one of claims 1 to 4, wherein each pixel (300) comprises at least the isolation element b).
    [0006]
    The sensor of claim 5, wherein, in each pixel (300), the vertical isolation wall (330) comprises a doped region of the same conductivity type as the substrate and having a doping level higher than that of the substrate, located in a lower part of the opening formed in the first electrode (103).
    [0007]
    The sensor of claim 5, wherein in each pixel (300) the aperture formed in the first electrode (103) extends to a depth less than the total depth of the first electrode (103), and wherein the insulation wall (330) is constituted by the portion of the first electrode (103) located under said opening.
    [0008]
    8. The sensor of claim 5, wherein, in each pixel (300), the isolation wall (330) is constituted by a vertical insulating trench extending from the rear face of the substrate, facing a lower portion. of the opening formed in the first electrode (103).
    [0009]
    A sensor according to any of claims 5 to 8, wherein in each pixel (300): the photosensitive area comprises a first well (105) of conductivity type opposite to that of the substrate, and the storage area comprises a second well (107) of conductivity type opposite to that of the substrate and of greater depth than that of the first well (105); the first electrode (103) extends to a depth greater than or equal to that of the second box (107); andB13722 - DD15786 - 14-GR4-0604 25 the vertical isolation wall (330) extends between the rear face plane of the first electrode (103), and a plane located under the rear face plane of the first housing ( 105).
    [0010]
    The sensor of any one of claims 1 to 9, wherein each pixel (300) comprises isolation element a) and isolation element b).
    [0011]
    The sensor of any one of claims 1 to 10, wherein each pixel (200; 300) further comprises a second insulated vertical electrode (109) extending from the front face of the substrate between the storage area ( 107) and the read area (111), comprising at least one aperture extending from the front face of the substrate and defining a charge transfer area (106) between the storage area (107) and the read area ( 111). 15
    [0012]
    The sensor according to any one of claims 1 to 11, wherein in each pixel (200; 300) the photosensitive area (105) is partially delimited by at least a third isolated vertical electrode (102) extending from the front face of the substrate. 20
    [0013]
    The sensor of any one of claims 1 to 12, wherein in each pixel (200; 300) the read area (111) is coupled to a read circuit of the pixel.
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    法律状态:
    2015-10-21| PLFP| Fee payment|Year of fee payment: 2 |
    2016-04-29| PLSC| Publication of the preliminary search report|Effective date: 20160429 |
    2016-10-28| PLFP| Fee payment|Year of fee payment: 3 |
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    2021-10-29| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
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    FR1460301A|FR3027732B1|2014-10-27|2014-10-27|VERTICAL ELECTRODES IMAGE SENSOR|FR1460301A| FR3027732B1|2014-10-27|2014-10-27|VERTICAL ELECTRODES IMAGE SENSOR|
    EP15190269.9A| EP3016141A1|2014-10-27|2015-10-16|Image sensor with vertical electrodes|
    US14/919,836| US9917124B2|2014-10-27|2015-10-22|Image sensor with vertical electrodes|
    US15/713,639| US10170513B2|2014-10-27|2017-09-23|Image sensor with vertical electrodes|
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